Photoluminescence of semi-insulating InP wafers prepared by two-step wafer annealingUCHIDA, M; ODA, O; WARASHINA, M et al.Journal of the Electrochemical Society. 1998, Vol 145, Num 3, pp 1048-1051, issn 0013-4651Article

A study of electron transition in the energy gap of SI-GaAs with photoconductivity spectra and under α-particle irradiationZARDAS, G. E; YANNAKOPOULOS, P. H; SYMEONIDES, Chrys I et al.Microelectronics journal. 2008, Vol 39, Num 5, pp 737-739, issn 0959-8324, 3 p.Article

Investigations of the electrical and structural characteristics of so MeV ⁷Li implanted SI-InPDHARMARASU, N; ARULKUMARAN, S; SUMATHI, R. R et al.Physica status solidi. A. Applied research. 1998, Vol 167, Num 1, pp 157-163, issn 0031-8965Article

Phase distinction in semi-insulating polycrystalline silicon by pattern recognition of X-ray photoelectron spectroscopy/X-ray-induced Auger electron spectroscopy dataLESIAK, B; ZEMEK, J; JOZWIK, A et al.Applied surface science. 1998, Vol 135, Num 1-4, pp 318-330, issn 0169-4332Article

Diffusion of acceptors in n-type and semi-insulating InPTUCK, B.Journal of crystal growth. 2000, Vol 208, Num 1-4, pp 123-129, issn 0022-0248Article

Deep centers in undoped semi-insulating InPFANG, Z.-Q; LOOK, D. C; UCHIDA, M et al.Journal of electronic materials. 1998, Vol 27, Num 10, pp L68-L71, issn 0361-5235Article

Multiple gratings in semi-insulating GaAs crystalSHAOPING BIAN; FREJLICH, J; SUGG, B et al.Optics communications. 1995, Vol 115, Num 1-2, pp 151-157, issn 0030-4018Article

High Voltage (3130 V) 4H-SiC Lateral p-n Diodes on a Semiinsulating SubstrateHUANG, Chih-Fang; KUO, Jin-Rong; TSAI, Chih-Chung et al.IEEE electron device letters. 2008, Vol 29, Num 1, pp 83-85, issn 0741-3106, 3 p.Article

Inclusions in LEC-grown Si GaAs single crystalsEICHLER, S; FLIEGEL, W; JURISCH, M et al.Journal of crystal growth. 2008, Vol 310, Num 7-9, pp 1410-1417, issn 0022-0248, 8 p.Article